2019/08/19 by Yu Liu, Alessandra Luchini, Liu, Yu +35
Materials Science · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Magnetic and transport properties of perovskites and related materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph) #ZnO doping and properties
paper · pdf · doi:10.48550/arxiv.1908.07096
openalex publication_date 2019/08/19 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic exchange. In this work, we present lattice matched hybrid epitaxy of semiconductor - ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure as well as their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the bandgap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs. Induced moments in the adjacent InAs layers were not detected although our ab initio calculations indicate a small exchange field in the InAs layer. This work presents a step towards realizing high quality semiconductor - ferromagnetic insulator hybrids, which is a critical requirement for development of various quantum and spintronic applications without external magnetic fields.