Low-loss Sb₂S₃ Optical Phase Shifter Enabled by Optimizing Sputtering Conditions

2025/05/15 by Yuto Miyatake, Tomohiro Anda, Miyatake, Yuto +15 · 1 citation
Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Optical and Acousto-Optic Technologies #Optics (physics.optics) #Phase-change materials and chalcogenides #Photorefractive and Nonlinear Optics

paper · pdf · doi:10.48550/arxiv.2505.10752

openalex publication_date 2025/05/15 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

By quantitatively evaluating the atomic concentrations of sputtered Sb₂S₃ films with different sputtering powers and Ar flows, we reveal that a sputtered Sb₂S₃ film becomes close to the stoichiometric composition as the sputtering power and Ar flow decrease. We characterize the optical properties of Sb₂S₃ and show that the lower sputtering power leads to a better figure of merit of Sb₂S₃ as an optical phase shifter in the near infrared (NIR) range. Based on these results, we achieve a loss per phase shift of 0.33 dB/π at a wavelength of 1.55 μm, one of the lowest losses among Sb₂S₃ phase shifters in the NIR range.

Citations

• Pixelated non-volatile programmable photonic integrated circuits with 20-level intermediate states
• Capping Layer Effects on Sb₂S₃-based Reconfigurable Photonic Devices
• Ultra-compact nonvolatile phase shifter based on electrically reprogrammable transparent phase change materials
• Towards low loss non-volatile phase change materials in mid index\n waveguides
• Miniature Multi-Level Optical Memristive Switch Using Phase Change Material
• Plasmonic nanogap enhanced phase change devices with dual\n electrical-optical functionality

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