2021/01/11 by S. V. Bakhlanov, С. В. Бахланов, Bakhlanov, S. V. +29
Chemistry · Engineering · Physics and Astronomy · #Acceptor #Alpha particle #Analytical Chemistry (journal) #Atomic physics #Chemistry #Condensed matter physics #Crystallography #Depletion region #FOS: Physical sciences #Fluence #Instrumentation and Detectors (physics.ins-det) #Integrated Circuits and Semiconductor Failure Analysis #Ion-surface interactions and analysis #Irradiation #Materials Science (cond-mat.mtrl-sci) #Materials science #Molecular physics #Nuclear Experiment (nucl-ex) #Nuclear physics #Optics #Optoelectronics #Physics #Radiation #Semiconductor #Silicon and Solar Cell Technologies #Vacancy defect #cond-mat.mtrl-sci #nucl-ex #physics.ins-det
paper · pdf · doi:10.48550/arxiv.2101.03729
published in arXiv (Cornell University) (Cornell University) · 8 pages, 4 figures
arxiv created 2021/01/11 · openalex publication_date 2021/01/11 · arxiv updated 2021/01/12 · openalex created_date 2024/04/11 · openalex updated_date 2026/07/28
Deterioration of the operation parameters of Al/SiO2/p-type Si surface barrier detector upon irradiation with alpha-particles at room temperature was investigated. As a result of 40-days irradiation with a total fluence of 8*109 α-particles, an increase of α-peak FWHM from 70 keV to 100 keV was observed and explained by increase of the detector reverse current due to formation of a high concentration of near mid-gap defect levels. Performed CV measurements revealed the appearance of at least 6*1012 cm-3 radiation-induced acceptors at the depths where according to the TRIM simulations the highest concentration of vacancy-interstitial pairs was created by the incoming α-particles. The studies carried out by current-DLTS technique allowed to associate the observed increase of the acceptor concentration with the near mid-gap acceptor level at EV+0.56 eV. This level can be apparently associated with V2O defects recognized previously to be responsible for the space charge sign inversion in the irradiated n-type Si detectors.