2009/08/27 by J A Haigh, J. A. Haigh, A. W. Rushforth +18
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic Field Sensors Techniques #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #ZnO doping and properties #cond-mat.mes-hall #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0908.3960
arxiv created 2009/08/27 · openalex publication_date 2009/08/27 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We demonstrate a simple, low cost, magneto-transport method for rapidly characterizing the magnetic anisotropy and anisotropic magneto-resistance (AMR) of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is the analogue of magnetic susceptibility measurements of bulk material but is applicable to very small samples with low total moment. The technique is used to characterize devices fabricated from the dilute magnetic semiconductor (Ga,Mn)As. The technique allows us to probe the behavior of the parameters close to the Curie temperature, in the limit of the applied magnetic field tending to zero. This avoids the complications arising from the presence of paramagnetism.