Diagnosis of transport properties in Ferromagnets

2004/06/01 by Andrew Das Arulsamy, Arulsamy, Andrew Das
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic Properties and Applications #Magnetic properties of thin films #Materials Science (cond-mat.mtrl-sci) #Strongly Correlated Electrons (cond-mat.str-el) #Surface and Thin Film Phenomena #cond-mat.mtrl-sci #cond-mat.str-el

paper · pdf · doi:10.48550/arxiv.cond-mat/0406030

Additional section on iFDS (cond-mat/0410443)

openalex publication_date 2004/06/01 · arxiv created 2005/03/11 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The resistivity model as a function of temperature and ionization energy (doping) is derived with further confinements from spin-disorder scattering in ferromagnetic phase. Magnetization and polaronic effects capture the mechanism of both spin independent and spin-assisted charge transport of ferromagnets, including the newly reported Mn_xGe_1-x ferromagnetic semiconductor. The computed T_crossover below T_C and carrier density in Ga_1-xMn_xAs system are 8-12 K and 10¹⁹ cm^-3, remarkably identical with the experimental values of 10-12 K and 10¹⁸-10²⁰ cm^-3 respectively. The calculated charge carriers density for Mn_xGe_1-x is 10¹⁹ cm^-3, which is also in the same order with the experimental values.

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