2018/09/26 by S. P. Giblin, P. See, Giblin, S. P. +13
Physics and Astronomy · Materials Science · #Quantum and electron transport phenomena #Advanced Thermodynamics and Statistical Mechanics #Electronic and Structural Properties of Oxides
paper · pdf · doi:10.48550/arxiv.1809.10249
We measure the average number of electrons loaded into an electrostatically-defined quantum dot (QD) operated as a tunable-barrier electron pump, using a point-contact (PC) charge sensor 1 micron away from the QD. The measurement of the electron number probes the QD loading dynamics even in the limit of slow gate voltage rise-times, when the pumped current is too small to measure. Using simulations we show that, with optimised QD-PC coupling, the experiment can make single-shot measurements of the number of electrons in the QD with sufficiently high fidelity to test the error rate of the electron pump with metrological precision.