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Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)2As2

2017/02/24 by Rui Wang, Wang, Rui, ZhongXue Huang +22
Materials Science · Physics and Astronomy · #FOS: Physical sciences #Iron-based superconductors research #Materials Science (cond-mat.mtrl-sci) #Physics of Superconductivity and Magnetism #ZnO doping and properties #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1702.07506

arxiv created 2017/02/24 · openalex publication_date 2017/02/24 · arxiv updated 2017/02/27 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28

Abstract

Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS) Ba1-xKx(Zn1-yMny)2As2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O3 substrate with their magnetic polarization aligned almost solely on the film growth direction.

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