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Growth and Properties of Quaternary Alloy Magnetic Semiconductor (InGaMn)As

2001/11/09 by Shinobu Ohya, Hiromasa Shimizu, Ohya, Shinobu +8
Engineering · Physics and Astronomy · #FOS: Physical sciences #Magnetic Field Sensors Techniques #Materials Science (cond-mat.mtrl-sci) #Semiconductor Quantum Structures and Devices #Surface Roughness and Optical Measurements #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.cond-mat/0111163

4 pages, 4 figures

arxiv created 2001/11/09 · openalex publication_date 2001/11/09 · arxiv updated 2009/11/30 · openalex created_date 2019/06/27 · openalex updated_date 2026/07/28

Abstract

We have studied growth and properties of quaternary alloy magnetic semiconductor (InGaMn)As grown both on GaAs substrates and on InP substrates by low-temperature molecular-beam epitaxy (LT-MBE). (InGaMn)As thin films were ferromagnetic below ~30 K, exhibiting strong magneto-optical effect. The lattice constant of [(InyGa1-y)1-xMnx]As, whose Mn concentration x is below 4%, is slightly smaller than that of InyGa1-yAs with the same In/Ga content ratio. We have also obtained very smooth surface morphology of nearly lattice matched (InGaMn)As thin films grown on InP substrates, which is important for application to thin-film type magneto-optical devices integrated with III-V opto-electronics.

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