2023/09/07 by N. T. Bagraev, С. А. Кукушкін, Bagraev, N. T. +9
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Photonic and Optical Devices #Semiconductor materials and interfaces #Silicon Nanostructures and Photoluminescence
paper · pdf · doi:10.48550/arxiv.2309.03927
openalex publication_date 2023/09/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
For the first time, electroluminescence detected in the middle and far infrared ranges from silicon carbide nanostructures on silicon, obtained in the framework of the Hall geometry. Silicon carbide on silicon was grown by the method of substitution of atoms on silicon. The electroluminescence from the edge channels of nanostructures is induced due to the longitudinal drain-source current. The electroluminescence spectra obtained in the terahertz frequency range, 3.4, 0.12 THz, arise due to the quantum Faraday effect. Within the framework of the proposed model, the longitudinal current induces a change in the number of magnetic flux quanta in the edge channels, which leads to the appearance of a generation current in the edge channel and, accordingly, to terahertz radiation.