2007/12/10 by Yunori Nisikawa, Nisikawa, Yunori, Muneharu Ibuki +3
Engineering · Materials Science · Physics and Astronomy · #Copper Interconnects and Reliability #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Silicon Carbide Semiconductor Technologies #Thin-Film Transistor Technologies #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.0712.1406
8 pages, 8 figures. submitted to Physical Review B. Please also see following related paper: arXiv:cond-mat/0311008 and arXiv:cond-mat/0405009
openalex publication_date 2007/12/10 · arxiv created 2009/09/21 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We theoretically demonstrate that a resonant inelastic x-ray scattering (RIXS) with a sizable momentum transfer can be utilized to study valence band dispersion for broad band materials. We take RIXS at the Si K edge of 3C-SiC as a typical example. The RIXS spectra are calculated by systematically changing the transferred momentum, an incident photon polarization and an incident photon energy, on the basis of an ab initio calculation. We find that the spectra depend heavily on both the transferred momentum and the incident photon polarization, and the peaks in the spectra correspond to the energies of the valence bands. We conclude that the information on the energy dispersion of valence bands can be extracted from the transferred momentum dependence of the RIXS spectra. These findings lead to further application for RIXS when investigating the band structure of broad band materials.