2017/09/20 by Dmitri E. Nikonov, Sasikanth Manipatruni, Nikonov, Dmitri E. +3
Engineering · Materials Science · Physics and Astronomy · #Electromagnetic Simulation and Numerical Methods #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Ferroelectric and Piezoelectric Materials #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Multiferroics and related materials
paper · pdf · doi:10.48550/arxiv.1709.07047
openalex publication_date 2017/09/20 · openalex created_date 2022/09/04 · openalex updated_date 2026/07/28
In the quest to develop spintronic logic, it was discovered that\nmagnetoelectric switching results in lower energy and shorter switching time\nthan other mechanisms. Magnetoelectric (ME) field due to exchange bias at the\ninterface with a multi-ferroic (such as BiFeO3) is well suited for 180 degree\nswitching of magnetization. The ME field is determined by the direction of\ncanted magnetization in BiFeO3 which can point at an angle to the plane, to\nwhich voltage is applied. Dependence of switching time and the threshold of ME\nfield on its angles was determined by micromagnetic simulations. Switching\noccurs by formation of a domain wall on the side of the nanomagnet on top of\nBFO and its propagation to the rest of the magnet. For in-plane magnetization,\nswitching occurs over a wide range of angles and at all magnitudes of ME field\nabove threshold. For out-of-plane magnetization failure occurs (with an\nexception of a narrow range of angles and magnitudes of ME field) due to the\ndomain wall reflecting from the opposite end of the nanomagnet.\n