2010/12/03 by Kuntal Roy, Supriyo Bandyopadhyay, Roy, Kuntal +3 · 1 citation
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Ferroelectric and Negative Capacitance Devices #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Multiferroics and related materials #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.1012.0819
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arxiv created 2010/12/03 · openalex publication_date 2010/12/03 · arxiv updated 2015/03/17 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In magnetic memory and logic devices, a magnet's magnetization is usually flipped with a spin polarized current delivering a spin transfer torque (STT). This mode of switching consumes too much energy and considerable energy saving can accrue from using a multiferroic nanomagnet switched with a combination of STT and mechanical stress generated with a voltage (VGS). The VGS mode consumes less energy than STT, but cannot rotate magnetization by more than 90?, so that a combination of the two modes is needed for energy-efficient switching.