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Wang, Li-Chen

  1. Ferroelectric HfO2 Memory Transistors with High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles
    2021/03/16 by Tan, Ava Jiang, Liao, Yu-Hung, Wang, Li-Chen +3 · 1 citation
    #Applied Physics (physics.app-ph) #FOS: Physical sciences