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Vincent, Laetitia

  1. Growth-related formation mechanism of I3-type basal stacking fault in epitaxially grown hexagonal Ge-2H
    2022/01/06 by Laetitia Vincent, Elham Fadaly, Vincent, Laetitia +15 · 1 citation
    Engineering · Physics and Astronomy · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Nanowire Synthesis and Applications #Photonic and Optical Devices #Semiconductor Quantum Structures and Devices