Joseph M. Hayes

1. Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
   2002/01/01 by Martin Kuball, Joseph M. Hayes, Michael J. Uren +4 · 1 citation
   Physics and Astronomy · Engineering · #GaN-based semiconductor devices and materials #Silicon Carbide Semiconductor Technologies #Semiconductor materials and devices