Mario Negri

1. Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition
   2016/01/01 by Matteo Bosi, G. Attolini, Mario Negri +10 · 1 citation
   Engineering · Materials Science · #Copper Interconnects and Reliability #Semiconductor materials and devices #Silicon Carbide Semiconductor Technologies