William Snodgrass

1. 12.5 nm base pseudomorphic heterojunction bipolar transistors achieving fT=710GHz and fMAX=340GHz
   2005/12/14 by W. Hafez, William Snodgrass, M. Feng · 1 citation
   Engineering · #Semiconductor materials and devices #Advancements in Semiconductor Devices and Circuit Design #Ferroelectric and Negative Capacitance Devices