2024/07/30 by Hans Richter, Richter, H. J., G. Mihajlović +13
Engineering · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Magnetic Properties and Applications #Magnetic properties of thin films #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Non-Destructive Testing Techniques
paper · pdf · doi:10.48550/arxiv.2407.20965
openalex publication_date 2024/07/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report device level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory (MRAM) cells. It is shown that thermal agitation enhances the apparent damping for cells smaller than about 55 nm. The effect is fundamental and does not reflect a true damping increase. In addition to the thermal effect, it is still found that device level damping is higher than film level damping and increases with decreasing cell size. This is attributed to edge damage caused by device patterning.