First-principles investigation on structural evolution, electronic and optical behaviors of novel two-dimensional cubic-phase III-V X/Y (X = Si, C; Y = Al, N) heterostructures

2026/07/21 by Yuexin Xia, Yuzhu Hao, Xuhao He +5
Physics and Astronomy · Engineering · Materials Science · #GaN-based semiconductor devices and materials #Silicon Carbide Semiconductor Technologies #Ga2O3 and related materials

paper · doi:10.1016/j.susc.2026.123069