2024/05/28 by Zhao Sen, K. C. Wang, Zhao, Sen +11
Engineering · #FOS: Physical sciences #High Energy Physics - Experiment (hep-ex) #Instrumentation and Detectors (physics.ins-det) #Silicon Carbide Semiconductor Technologies
paper · pdf · doi:10.48550/arxiv.2405.18112
openalex publication_date 2024/05/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The 4H-SiC material exhibits good detection performance, but there are still many problems like signal distortion and poor signal quality. The 4H-SiC low gain avalanche detector (LGAD) has been fabricated for the first time to solve these problems, which named SICAR (SIlicon CARbide). The results of electrical characteristics and charge collection performance of the 4H-SiC LGAD are reported. The influence of different metal thicknesses on the leakage current of the device is studied.~By optimizing the fabrication process, the leakage current of the detector is reduced by four orders of magnitude. The experimental results confirm this 4H-SiC LGAD has an obvious gain structure, the gain factor of the SICAR is reported to be about 2 at 150 V. The charge collection efficiency (CCE) of the device was analyzed using α particle incidence of 5.54 MeV, and the CCE is 90% @100~V. This study provides a novel 4H-SiC LGAD radiation detector for application in the field of high energy particle physics.