Negative Capacitance for Stabilizing Logic State in Tunnel Field-Effect Transistor

2024/03/18 by Koushik Dey, Bikash Das, Dey, Koushik +19
Engineering · #Advancements in Semiconductor Devices and Circuit Design #Applied Physics (physics.app-ph) #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and devices

paper · pdf · doi:10.48550/arxiv.2403.11658

openalex publication_date 2024/03/18 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

The study investigates the influence of negative capacitance on the transfer characteristics of vdW FETs on the heterophase of CIPS ferroelectric. Notably, a less pronounced NC resulting from the spatial distribution of the ferroelectric and paraelectric phases plays crucial role in stabilizing of n-channel-conductance. This results into the emergence of a non-volatile logic state, between the two binary states of TFETs. Concerned study proposed NC-TFETs based on ferroionic crystals as promising devices for generating a stable logic state below Vth.

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