Predicting the ionization threshold for carriers in excited semiconductors

2007/09/10 by David W. Snoke, David Snoke · 45 citations
Chemistry · Physics and Astronomy · #Advanced Chemical Physics Studies #Atomic physics #Charge carrier #Chemistry #Condensed matter physics #Electron #Excited state #Exciton #Free carrier #Impact ionization #Ionization #Materials science #Optoelectronics #Physics #Quantum and electron transport phenomena #Quantum mechanics #Quantum well #Semiconductor #Semiconductor Quantum Structures and Devices #Simple (philosophy) #cond-mat.other

paper · pdf · doi:10.1016/j.ssc.2008.01.012

published in Solid State Communications 146(1-2), 73-77 (Elsevier BV)

arxiv created 2007/09/10 · openalex publication_date 2008/01/20 · arxiv updated 2009/12/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/05

Abstract

A simple set of formulas is presented which allows prediction of the fraction of ionized carriers in an electron-hole-exciton gas in a photoexcited semiconductor. These results are related to recent experiments with excitons in single and double quantum wells.

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