2015/12/16 by G. C. Kim, Kim, G. C., M. Cheon +6
Chemistry · Materials Science · Physics and Astronomy · #FOS: Physical sciences #Inorganic Fluorides and Related Compounds #Iron-based superconductors research #Rare-earth and actinide compounds #Strongly Correlated Electrons (cond-mat.str-el) #Superconductivity (cond-mat.supr-con) #cond-mat.str-el #cond-mat.supr-con
paper · pdf · doi:10.48550/arxiv.1512.05070
arxiv created 2015/12/16 · openalex publication_date 2015/12/16 · arxiv updated 2015/12/17 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28
We report the effects of electron doping on the crystal structure and electrical resistivity of LaOBiS2-xFx (0.05 ≤ x ≤ 0.2). The ab plane is found to be relatively insensitive to the amount of F, whereas the c axis shrinks continuously with increasing x, suggesting that the doped F atoms substitute selectively into the apical sites in the BiS2 layer. At x = 0.10, as the temperature is decreased from room temperature, the electrical resistivity is temperature-independent from room temperature to 285 K, increases linearly with decreasing temperature from 285 K to 205 K and then shows obvious insulating behavior below 205 K, which may be due to strong spin-orbit coupling. LaOBiS1.9F0.1 shows the significantly weak and temperature-independent diamagnetism without any evident anomalies caused by a phase transition.