2022/06/08 by Naveen Shetty, Shetty, Naveen, Hans He +18
Engineering · Materials Science · #2D Materials and Applications #FOS: Physical sciences #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Semiconductor materials and devices
paper · pdf · doi:10.48550/arxiv.2206.03839
openalex publication_date 2022/06/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenides (TMDCs) molybdenum disulfide (MoS2). For epigraphene, the specific contact resistances are of the order of ρc ~ 50 Ωμm, and follow the Landauer quantum limit, ρc ∝ n-1/2, with n being the carrier density of graphene. For MoS2 flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of > 106 at room temperature ( > 109 at cryogenic temperatures). The fabrication route here demonstrated allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials.