2023/01/21 by Ahnaf Tahmid Abir, Abir, Ahnaf Tahmid, Bipanko Kumar Mondal +3
Engineering · Physics and Astronomy · #Advanced Thermodynamics and Statistical Mechanics #Applied Physics (physics.app-ph) #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Thermal Radiation and Cooling Technologies #solar cell performance optimization
paper · pdf · doi:10.48550/arxiv.2301.08896
openalex publication_date 2023/01/21 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Germanium telluride (GeTe) having a direct bandgap of 0.6 eV has mainly been in phase change memory and thermoelectric power generation. In this article, we study the electronic structure of the GeTe by first-principles calculations. The theoretical direct bandgap of GeTe was found to be 0.69 eV which is very close to the experimental value. Then, we demonstrate a single-junction GeTe thermophotovoltaic (TPV) cell based on device transport model with np structure. The device was optimized for the higher performance of the TPV cell. The GeTe TPV cell exhibited an efficiency of 7.9% with JSC=16.16 A/cm2, VOC=0.360 V and FF=75.51%, respectively. These results indicate that GeTe could be a promising material for the fabrication of efficient TPV cell.