2025/06/09 by Zelalem Abebe Bekele, Bekele, Zelalem Abebe, Kun Lei +18
Materials Science · Physics and Astronomy · #Magnetic properties of thin films #Multiferroics and related materials #Topological Materials and Phenomena #cond-mat.mtrl-sci
paper · pdf · doi:10.48550/arxiv.2506.07608
openalex publication_date 2025/06/09 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current (\mathbitJ_\mathbitSHE), advancing energy-efficient spintronics. In parallel, the orbital Hall effect (OHE) offers an alternative pathway to SHE for converting charge current into an angular momentum flow. In this study, we demonstrate field-free current-induced perpendicular ferrimagnetic deterministic switching within a Mo/CoGd device without an additional orbital-to-spin conversion layer. This is achieved by harnessing localized orbital Hall currents (\mathbitJ_\mathbitOHE) generated in the Mo layer. The in-plane symmetry breaking at the Mo/CoGd surface-interface layer, validated by a pronounced planar Hall effect, gives rise to a substantial unconventional z-polarized damping-like torque. The CoGd serves a dual role: not only as a converter that transforms the significant \mathbitJ_\mathbitOHE into \mathbitJ_\mathbitSHE but also as a ferrimagnetic self-switching mechanism. This dual functionality enables highly efficient field-free current-induced magnetization switching with a critical current density as low as 2.51 ×106 A cm-2. Our work highlights the potential of orbital Hall currents for energy-efficient magnetization switching, making a notable contribution to the burgeoning field of orbitronics.