2002/09/04 by Michael Tews, M. Tews, Tews, Michael +2
Physics and Astronomy · #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum and electron transport phenomena #Semiconductor Quantum Structures and Devices #Surface and Thin Film Phenomena #cond-mat.mes-hall
paper · pdf · doi:10.48550/arxiv.cond-mat/0209102
8 pages, 6 figures, LaTeX, iopart, in proceedings of the 26th ICPS
arxiv created 2002/09/04 · openalex publication_date 2002/09/04 · arxiv updated 2009/11/30 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The influence of the tip-substrate bias induced electric field in a scanning-tunneling-spectroscopy experiment on charged InAs nanocrystals is studied. Calculating the ground and first excited many-particle state for five electrons occupying the quantum dot reveals a Stark-induced reordering of states by increasing the electric field strength. It is shown that this reordering of states is accompanied by a symmetry change of the local density of states (LDOS), which in principal is observable in a wave-function mapping experiment. Since in the usually performed experiments the electric field can not be directly controlled, we investigate the crystal size dependence of the 5-electron LDOS symmetry. It is found that the symmetry changes from spherical to torus-like by increasing the nanocrystal radius.