2022/01/26 by Krister Leonart Haugen, Konstantinos Papastergiou, Haugen, Krister Leonart +5
Engineering · Physics and Astronomy · #Accelerator Physics (physics.acc-ph) #Advanced DC-DC Converters #FOS: Physical sciences #Induction Heating and Inverter Technology #Silicon Carbide Semiconductor Technologies #physics.acc-ph
paper · pdf · doi:10.48550/arxiv.2201.10824
6 pages. Part of the proceedings of the 2021 TWEPP conference
openalex publication_date 2022/01/26 · arxiv created 2022/01/27 · arxiv updated 2022/01/28 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) to be an excellent replacement of existing Silicon insulated gate bipolar transistors (IGBTs) technology. These characteristics combined with high switching frequency operation, enables the design of high-accuracy DC-DC converters with minimised filtering requirements. This paper investigates the design for a converter with high-accuracy current (0.9ppm) supplying a 0.05H electromagnetic load, aiming to achieve the accuracy without the use of active filters, by using SiC MOSFETs and a scalable module-based converter design.