Interband absorption in single layer hexagonal boron nitride

2011/09/23 by Aniruddha Konar, Raj K. Jana, Konar, Aniruddha +9
Engineering · Physics and Astronomy · #Advanced Fiber Laser Technologies #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Plasmonic and Surface Plasmon Research

paper · pdf · doi:10.48550/arxiv.1109.5145

openalex publication_date 2011/09/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In this report, the light absorption of a single layer hexagonal boron nitride is calculated using a tight-binding Hamiltonian. The absorption is found to be monotonically decreasing function of photon energy compared to graphene where absorption coefficient is independent of photon energy and characterized by the effective fine-structure constant.

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