Single Microhole per Pixel in CMOS Image Sensor with Enhanced Optical Sensitivity in Near-Infrared

2020/11/20 by Ekaterina Ponizovskaya Devine, Wayesh Qarony, Devine, E. Ponizovskaya +17
Engineering · Physics and Astronomy · #Advanced Optical Sensing Technologies #CCD and CMOS Imaging Sensors #FOS: Electrical engineering #FOS: Physical sciences #Image and Video Processing (eess.IV) #Optics (physics.optics) #Thin-Film Transistor Technologies #electronic engineering #information engineering

paper · pdf · doi:10.48550/arxiv.2011.10624

openalex publication_date 2020/11/20 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths, the enhancement allows 70% absorption in a 3 microns thick Si. It is 4x better than for the flat pixel. We compared different shapes and sizes of single holes and holes arrays. We have shown that a certain size and shape in single holes pronounce better optical efficiency enhancement. The crosstalk was successfully reduced with trenches between pixels. We optimized the trenches to achieve minimal pixel separation for 1.12 microns pixel.

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