2018/03/08 by Zoran Rukelj, Rukelj, Zoran, Vito Despoja +1
Physics and Astronomy · #Semiconductor Quantum Structures and Devices #GaN-based semiconductor devices and materials #Quantum and electron transport phenomena
paper · pdf · doi:10.48550/arxiv.1803.03100
A theoretical study of the exciton binding energy in the two-dimensional\nhexagonal boron nitride monolayer is presented within the tight-binding\napproximation (TBA). A self-consistent equation for the interband electron-hole\npropagators is derived and in the long wavelength limit reduced to the standard\nhydrogen atom like Schrodinger equation. It is shown that inclusion of\ndynamically screened Coulomb interaction in ladder term is of crucial\nimportance for proper description of exciton binding energy. This leads to the\nself-consistent eigenvalue problem with dynamical screening. The dependence of\nthe exciton energy on the orbital quantum number is studied. It is predicted\nthat for the fixed principal quantum number the states with higher orbital\nmomentum have lower energy than the states with lower orbital momentum. Using\nthe developed formulas and the experimental optical gap the quasiparticle gap\nis estimated. In the limit of high polarizability, a semiclassical procedure\nwas used to obtain the exciton binding energy. The TBA parametrization is\nsupported by ab initio calculations.\n