Pt, Ni and Ti Schottky barrier contacts to beta-(Al0.19Ga0.81)2O3\n grown by Molecular Beam Epitaxy on Sn doped beta-Ga2O3 substrate

2018/03/20 by Abhishek Vaidya, Kenji Sasaki, Vaidya, Abhishek +10
Materials Science · Engineering · Physics and Astronomy · #Ga2O3 and related materials #Semiconductor materials and devices #GaN-based semiconductor devices and materials

paper · pdf · doi:10.48550/arxiv.1803.07504

Abstract

A comprehensive current-voltage (I-V) characterization is performed for three\ndifferent Schottky contacts; Pt, Ni and Ti, to unintentionally doped (UID)\n beta-(Al0.19Ga0.81)2O3 grown by molecular beam epitaxy (MBE) on\n beta-Ga2O3 for temperatures ranging between 25C -300C. Reciprocal space\nmapping shows the (Al0.19Ga0.81)2O3 films are strained and lattice matched to\nthe substrate. Schottky Barrier Height (SBH), ideality factor (n), and series\nresistance (Rs) are extracted from the I-V characteristics for the three types\nof metals and temperatures. Room temperature capacitance-voltage (C-V)\nmeasurements revealed fully depleted beta-(Al0.19Ga0.81)2O3 layer. Extracted\nroom temperature SBHs after zero field correction for Pt, Ni and Ti were 2.39\neV, 2.21 eV, and 1.22 eV respectively. Variation of SBHs with metal clearly\nindicates the dependence on work function.\n

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