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Carrier heating and high-order harmonics generation in doped graphene by a strong ac electric field

2010/11/22 by F. T. Vasko, Vasko, F. T.
Engineering · Physics and Astronomy · #FOS: Physical sciences #GaN-based semiconductor devices and materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum optics and atomic interactions #Thermal Radiation and Cooling Technologies #cond-mat.mes-hall #cond-mat.mtrl-sci

paper · pdf · doi:10.48550/arxiv.1011.4841

3 pages, 3 figures

openalex publication_date 2010/11/22 · arxiv created 2011/02/02 · arxiv updated 2015/03/17 · openalex created_date 2016/06/24 · openalex updated_date 2026/07/28

Abstract

The nonlinear response of electrons (holes) in doped graphene on ac pumping is considered theoretically for the frequency region above the energy relaxation rate but below the momentum and carrier-carrier scattering rates. Temporally-dependent heating of electrons by a strong ac field, which is described within the energy balance approach, leads to an effective generation of high-order harmonics. The efficiency of up-conversion of the 1 mm radiation into the third harmonic by a single-layer graphene is about 10-7 at pumping level ~100 kW/cm2, room temperature, and concentration ~5 x 1011 cm-2.

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