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Nonvolatile ferroelectric field control of the anomalous Hall effect in BiFeO3/SrRuO3 bilayer

2019/10/07 by Zhaoyu Ren, Z. Y. Ren, Zhikang Yuan +26
Materials Science · Physics and Astronomy · #Magnetic and transport properties of perovskites and related materials #Magnetic properties of thin films #Multiferroics and related materials #cond-mat.mtrl-sci #cond-mat.str-el #physics.app-ph

paper · pdf · doi:10.48550/arxiv.1910.02588

arxiv created 2019/10/07 · arxiv updated 2019/10/08

Abstract

In this work, the BiFeO3 (BFO)/SrRuO3 (SRO) heterostructure was fabricated and the anomalous Hall effect (AHE) was investigated the in BFO/SRO. It is found the nonmonotonic anomalous Hall resistivity behavior in BFO/SRO is originated from the inhomogeneous SRO layer instead of the topological Hall effect. It is surprised that the AHE in BFO/SRO structure can be manipulated by ferroelectric polarization of BFO. Moreover, an inhomogeneous phenomenological model has been applied on those structure. Furthermore, the modification of band structure in SRO under ferroelectric polarization was discussed by first principle calculation. The ferroelectric-manipulated AHE suggests a new pathway to realize nonvolatile, reversible and low energy-consuming voltage-controlled spintronic devices.

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