2014/10/09 by Z. Sadygov, Sadygov, Z., Kh. Abdullaev +23
Engineering · Physics and Astronomy · #Advanced Optical Sensing Technologies #FOS: Physical sciences #Instrumentation and Detectors (physics.ins-det) #Integrated Circuits and Semiconductor Failure Analysis #Radiation Detection and Scintillator Technologies #physics.ins-det
paper · pdf · doi:10.48550/arxiv.1410.2619
15 pages, 10 figures; added comparison with existing models, new modelling results, experimental device details, new references
openalex publication_date 2014/10/09 · arxiv created 2015/05/05 · arxiv updated 2015/05/07 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
An approximate iterative model of avalanche process in a pixel of micropixel avalanche photodiode initiated by a single photoelectron is presented. The model describes development of the avalanche process in time, taking into account change of electric field within the depleted region caused by internal discharge and external recharge currents. Conclusions obtained as a result of modelling are compared with experimental data. Simulations show that typical durations of the front and rear edges of the discharge current have the same magnitude of less than 50 ps. The front of the external recharge current has the same duration, however duration of the rear edge depends on value of the quenching micro-resistor. It was found that effective capacitance of the pixel calculated as the slope of linear dependence of the pulse charge on bias voltage exceeds its real capacitance by a factor of two, while the total pixel voltage drop equals twice the value of bias overvoltage.