2020/09/23 by Noureddine Hadji, Hadji, Noureddine
Engineering · Materials Science · #Advancements in Photolithography Techniques #Electron and X-Ray Spectroscopy Techniques #FOS: Physical sciences #Integrated Circuits and Semiconductor Failure Analysis #Materials Science (cond-mat.mtrl-sci) #Other Condensed Matter (cond-mat.other)
paper · pdf · doi:10.48550/arxiv.2009.11181
openalex publication_date 2020/09/23 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
In previous work a different and powerful, analytical, technique was used to get data, such as the absolute atom concentration (AAC), specimen thickness etc., from public domain boron nitride EELS spectrum collected under a collection semi-angle, β, less than the plasmon cutoff angle, θc, but large relative to incident beam convergence, α. Here, seeking for some completeness, another, numerical, technique usable together with, also, β< θc is described in minute detail and applied to data obtained with β/α< 2, so necessitating incident beam convergence-related corrections. A lot of experimental physical parameters all fully relevant to one another are produced from a single EELS spectrum. Of public domain silicon nitride, Si3N4, EELS spectrum used. Comparison between results producible by the two β