2020/12/16 by Pascal Puech, Iann C. Gerber, Puech, Pascal +5
Materials Science · #2D Materials and Applications #Applied Physics (physics.app-ph) #FOS: Physical sciences #Ga2O3 and related materials #Graphene research and applications #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.2012.08869
openalex publication_date 2020/12/16 · openalex created_date 2022/07/25 · openalex updated_date 2026/07/28
Two-dimensional (2D) materials are among the most studied ones nowadays,\nbecause of their unique properties. These materials are made of, single- or few\natom-thick layers assembled by van der Waals forces, hence allowing a variety\nof stacking sequences possibly resulting in a variety of crystallographic\nstructures as soon as the sequences are periodic. Taking the example of few\nlayer graphene (FLG), it is of an utmost importance to identify both the number\nof layers and the stacking sequence, because of the driving role these\nparameters have on the properties. For this purpose, analysing the spot\nintensities of electron diffraction patterns (DPs) is commonly used, along with\nattempts to vary the number of layers, and the specimen tilt angle. However,\nthe number of sequences able to be discriminated this way remains few, because\nof the similarities between the DPs. Also, the possibility of the occurrence of\nC layers in addition to A and/or B layers in FLG has been rarely considered. To\novercome this limitation, we propose here a new methodology based on\nmulti-wavelength electron diffraction which is able to discriminate between\nstacking sequences up to 6 layers (potentially more) involving A, B, and C\nlayers. We also propose an innovative method to calculate the spot intensities\nin an easier and faster way than the standard ones. Additionally, we show that\nthe method is valid for transition metal dichalcogenides, taking the example of\nMoS2.\n