2021/01/24 by Guanghui Song, Song, Guanghui, Kui Cai +6
Engineering · Materials Science · #Advanced Memory and Neural Computing #Electronic and Structural Properties of Oxides #FOS: Computer and information sciences #Ferroelectric and Negative Capacitance Devices #Information Theory (cs.IT)
paper · pdf · doi:10.48550/arxiv.2101.09680
openalex publication_date 2021/01/24 · openalex created_date 2022/08/29 · openalex updated_date 2026/07/28
Resistive random-access memory is one of the most promising candidates for the next generation of non-volatile memory technology. However, its crossbar structure causes severe "sneak-path" interference, which also leads to strong inter-cell correlation. Recent works have mainly focused on sub-optimal data detection schemes by ignoring inter-cell correlation and treating sneak-path interference as independent noise. We propose a near-optimal data detection scheme that can approach the performance bound of the optimal detection scheme. Our detection scheme leverages a joint data and sneak-path interference recovery and can use all inter-cell correlations. The scheme is appropriate for data detection of large memory arrays with only linear operation complexity.