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Direct orientation contrast imaging of antiphase domains on III-V materials using scanning electron microscopy

2026/04/17 by Brieg Le Corre, Clothilde Grenèche, Rozenn Bernard +21 · 1 voice
Biochemistry, Genetics and Molecular Biology · Materials Science · #Advanced Electron Microscopy Techniques and Applications #Contrast (vision) #Electron and X-Ray Spectroscopy Techniques #Image contrast #Microscopy #Optical Coatings and Gratings #Orientation (vector space) #Scanning confocal electron microscopy #Scanning electron microscope #Scanning transmission electron microscopy

paper · pdf · doi:10.1103/vl71-8m3d

published in Physical Review Materials 10(7) (American Physical Society)

openalex publication_date 2026/07/20 · openalex created_date 2026/07/21 · openalex updated_date 2026/08/05

Abstract

Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 μm thick orientation-patterned GaP grown on GaAs sample, studying the anti-phase domain contrast with respect to the electron beam energy and the tilt angle. A qualitative approach is taken for III-V grown on non-polar materials with and without chemical mechanical polishing. Finally, a processing of the acquired image for GaP on Si reveals in plane preferential anti-phase boundaries.

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