2019/01/06 by Nguyen Thanh Tu, Pham Nam Hai, Tu, Nguyen Thanh +6 · 2 citations
Engineering · Materials Science · Physics and Astronomy · #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Heusler alloys: electronic and magnetic properties #Materials Science (cond-mat.mtrl-sci) #Semiconductor materials and interfaces
paper · pdf · doi:10.48550/arxiv.1901.01996
openalex publication_date 2019/01/06 · openalex created_date 2020/07/23 · openalex updated_date 2026/07/28
We present high-temperature ferromagnetism and large magnetic anisotropy in\nheavily Fe-doped n-type ferromagnetic semiconductor (In1-x,Fex)Sb (x = 20 -\n35%) thin films grown by low-temperature molecular beam epitaxy. The\n(In1-x,Fex)Sb thin films with x = 20 - 35% maintain the zinc-blende crystal and\nband structure with single-phase ferromagnetism. The Curie temperature (TC) of\n(In1-x,Fex)Sb reaches 390 K at x = 35%, which is significantly higher than room\ntemperature and the highest value so far reported in III-V based ferromagnetic\nsemiconductors. Moreover, large coercive force (HC = 160 Oe) and large remanent\nmagnetization (Mr/MS = 71%) have been observed for a (In1-x,Fex)Sb thin film\nwith x = 35%. Our results indicate that the n-type ferromagnetic semiconductor\n(In1-x,Fex)Sb is very promising for spintronics devices operating at room\ntemperature.\n