2025/12/17 by Niese, Markus, Masseroni, Michele, Scherm, Clara +10
#FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · doi:10.48550/arxiv.2512.15842
We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS2 using an integrated charge detector. We observe a crossover from two weakly coupled single dots to a strongly coupled double quantum dot. In the regime of extremely weak dot-lead coupling, where the direct transport current is below the detection limit, we measure the dot occupation via charge detection and access the few-electron regime. Due to the large band gap of MoS2, tunneling rates can be sufficiently suppressed to resolve individual tunneling events. These results establish a platform for single-shot spin- and valley-to-charge conversion and highlight the potential of transition-metal dichalcogenide quantum dots for quantum information applications.