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Ab initio study of magnetoresistance effect in \mathrmMn3Sn/MgO/\mathrmMn3Sn antiferromagnetic tunnel junction

2025/09/26 by Tanaka, Katsuhiro, Toga, Yuta, Minami, Susumu +4
#FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)

paper · doi:10.48550/arxiv.2509.21877

Abstract

The antiferromagnets with the time-reversal symmetry broken magnetic structures possess a finite spin splitting in the momentum space, and may contribute to a realization of a finite tunnel magnetoresistance (TMR) effect even with magnets with zero net spin polarization. In this paper, we study the TMR effect with the noncollinear antiferromagnet \mathrmMn3Sn whose inverse 120 antiferromagnetic order breaks the time-reversal symmetry. In particular, we employ the representative barrier material MgO as the tunnel insulator, and calculate the TMR effect in the \mathrmMn3Sn(0110)/MgO(110)/\mathrmMn3Sn magnetic tunnel junctions (MTJs), which has an optimal geometry for the spin-orbit torque switching of the magnetic configurations. We show that a finite TMR ratio reaching \gtrsim 1000% appears in the \mathrmMn3Sn/MgO/\mathrmMn3Sn MTJs, which is due to the spin splitting properties of \mathrmMn3Sn in the momentum space combined with the screening effect of MgO.

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