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Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene

2023/08/11 by Meizhen Huang, Zefei Wu, Xu Zhang +8 · 59 citations
Materials Science · Physics and Astronomy · #Berry connection and curvature #Bilayer graphene #Condensed matter physics #Curvature #Dipole #Geometric phase #Geometry #Graphene #Graphene research and applications #Hall effect #Magnetic field #Physics #Quantum Hall effect #Quantum and electron transport phenomena #Quantum mechanics #Superlattice #Topological Materials and Phenomena

paper · doi:10.1103/physrevlett.131.066301

published in Physical Review Letters 131(6), 066301 (American Physical Society)

openalex publication_date 2023/08/11 · openalex created_date 2025/10/10 · openalex updated_date 2026/08/01

Abstract

Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this Letter, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our Letter not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.

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