Band Structure of Graphite and de Haas-van Alphen Effect

1957/11/01 by J. W. McClure · 739 citations
Materials Science · Physics and Astronomy · #Atom (system on chip) #Atomic physics #Brillouin zone #Chemical and Physical Properties of Materials #Condensed matter physics #Degenerate energy levels #Electron #Electronic band structure #Graphene research and applications #Nuclear physics #Oscillation (cell signaling) #Physics #Quantum mechanics #Surface and Thin Film Phenomena

paper · doi:10.1103/physrev.108.612

published in Physical Review 108(3), 612-618 (American Institute of Physics)

openalex publication_date 1957/11/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/30

Abstract

The de Haas-van Alphen effect in the magnetic susceptibility of graphite has been interpreted by applying the susceptibility formula for general bands of Lifschitz and Kosevich to the band model of Slonczewski. The majority electrons and holes are responsible for the two periods of oscillation of the susceptibility. The analysis yields information concerning the band structure: (1) the total band overlap is about 0.03 ev, (2) the energy difference between the two doubly degenerate bands at the corner of the Brillouin zone is about 0.025 ev, (3) \ensuremathγ₀ must be larger than about 1.2 ev, and (4) the relation \ensuremathγ₁=0.04\ensuremathγ₀² holes approximately (where both \ensuremathγ's are in ev and correspond to Wallace's notation). Calculated carrier densities are 2.4\ifmmode×\else\texttimes\fi10^\ensuremath-5 per atom for electrons and 1.8\ifmmode×\else\texttimes\fi10^\ensuremath-5 per atom for holes, in rough agreement with estimates made from galvanomagnetic data. Rough agreement with electron specific-heat data is also obtained.

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