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Analysis of real-space transport channels for electrons and holes in halide perovskites

2025/05/26 by Frederik Vonhoff, Vonhoff, Frederik, Maximilian J. Schilcher +5 · 1 citation
Engineering · Materials Science · #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Perovskite Materials and Applications #Solid-state spectroscopy and crystallography

paper · pdf · doi:10.48550/arxiv.2505.19999

openalex publication_date 2025/05/26 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28

Abstract

Predicting and explaining charge carrier transport in halide perovskites is a formidable challenge because of the unusual vibrational and electron-phonon coupling properties of these materials. This study explores charge carrier transport in two prototypical halide perovskite materials, MAPbBr3 and MAPbI3, using a dynamic disorder model. Focusing on the role of real-space transport channels, we analyze temporal orbital occupations to assess the impact of material-specific on-site energy levels and spin-orbit coupling (SOC) strengths. Our findings reveal that both on-site energies and SOC magnitude significantly influence the orbital occupation dynamics, thereby affecting charge dispersal and carrier mobility. In particular, energy gaps across on-site levels and the halide SOC strength govern the filling of transport channels over time. This leads us to identify the ppπ channel as a critical bottleneck for charge transport and to provide insights into the differences between electron and hole transport across the two materials.

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