2025/06/01 by Abir Mukherjee, Mukherjee, Abir, Sharma, Kajal +8
Materials Science · Physics and Astronomy · #2D Materials and Applications #FOS: Physical sciences #Graphene research and applications #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Quantum Physics (quant-ph) #Topological Materials and Phenomena
paper · pdf · doi:10.48550/arxiv.2506.00971
openalex publication_date 2025/06/01 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Here, we report a prominent quantum oscillation in the conductance of 2H-MoTe2 based resonant tunneling structure. In this work, a n-WSe2/HfO2/i-MoTe2/HfO2/Au resonant tunneling device (RTD) with a symmetric and asymmetric double barrier has been fabricated using Molecular Beam Epitaxy (MBE) grown 2H-MoTe2 and Chemical Vapor Deposition (CVD) grown 2H-WSe2 along with theoretical modeling by adopting non-equilibrium Green function (NEGF) formalism. The impact of MoTe2-quantum well widths equal, and above its excitonic Bohr radius (EBR:0.7 nm) on resonant tunneling current is investigated at cryogenic temperatures. Such peak values increase with downscaling of the well width up to a certain value and then it decreases with further miniaturization. The corresponding maximum peak-to-valley current ratio (PVR) is estimated to be 4 at 4K in the low voltage range for the very first time in MoTe2 based RTD. Therefore, the present work may provide the route for fabrication of WSe2/MoTe2-based high performance resonant tunneling devices integrable with HEMT device for modern Qubit architecture operational at ultra-low temperatures.