2025/05/02 by Sujith Nedungattil Subrahmanian, Subrahmanian, Sujith Nedungattil, Mondal, Nabendu +2
Materials Science · Physics and Astronomy · #Applied Physics (physics.app-ph) #Diamond and Carbon-based Materials Research #FOS: Physical sciences #Force Microscopy Techniques and Applications #Hydrogen Storage and Materials #Materials Science (cond-mat.mtrl-sci) #Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
paper · pdf · doi:10.48550/arxiv.2505.01549
openalex publication_date 2025/05/02 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
We report from first principles, the possibility of reversible onset of topological insulator(TI) phase in heavier hydrogenated Xenes (Xane), namely, germanane and stanane, exclusively through in-plane electro-mechanical actuation. It is found possible to systematically induce robust uniaxial strain through non-uniform application of electric field in the plane of monolayers, as possible through application of in-homogeneous bias at gates of realizable length-scales embedded underneath. Electrically induced strain causes substantial lowering of band-gap across all Xanes, eventually evolving through weak followed by strong topologically insulating phases beyond a threshold degree of bias in-homogeneity in heavier Xanes, promisingly within the range of bias sustained by the monolayers. In case of nano-ribbons of these Xanes, bias applied in-homogeneously across width promises switchable emergence of TI phase over a fraction of width and topologically protected interface states localizable anywhere across the half-width of the ribbon. The demonstrated electro-mechanical actuation and the associated topological tuning of band-structure, thematically verified in gapped graphene based representative systems within the Kane-Mele model at half-filling, should be possible in the broader class of two dimensional covalent networks made of elements of the p-block.