vix.ing · top · new · best · stats

Enhancement and anisotropy of electron Lande factor due to spin-orbit interaction in semiconductor nanowires

2023/07/09 by Jan Czarnecki, Andrea Bertoni, Czarnecki, J. +5 · 1 citation
Materials Science · Physics and Astronomy · #Electronic and Structural Properties of Oxides #FOS: Physical sciences #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Physics of Superconductivity and Magnetism #Quantum and electron transport phenomena

paper · pdf · doi:10.48550/arxiv.2307.04265

openalex publication_date 2023/07/09 · openalex created_date 2023/07/13 · openalex updated_date 2026/07/28

Abstract

We investigate the effective Lande factor in semiconductor nanowires with strong Rashba spin-orbit coupling. Using the k\cdotp theory and the envelope function approach we derive a conduction band Hamiltonian where the tensor g^* is explicitly related to the spin-orbit coupling constant αR. Our model includes orbital effects from the Rashba spin-orbit term, leading to a significant enhancement of the effective Lande factor which is naturally anisotropic. For nanowires based on the low-gap, high spin-orbit coupled material InSb, we investigate the anisotropy of the effective Lande factor with respect to the magnetic field direction, exposing a twofold symmetry for the bottom gate architecture. The anisotropy results from the competition between the localization of the envelope function and the spin polarization of the electronic state, both determined by the magnetic field direction.

Cited by

Related