2020/12/08 by Yu‐Hao Deng, Deng, Yu-Hao
Engineering · Materials Science · #Applied Physics (physics.app-ph) #Chalcogenide Semiconductor Thin Films #FOS: Physical sciences #Materials Science (cond-mat.mtrl-sci) #Perovskite Materials and Applications #ZnO doping and properties
paper · doi:10.48550/arxiv.2012.04346
openalex publication_date 2020/12/08 · openalex created_date 2025/10/10 · openalex updated_date 2026/07/28
Defects are generally regarded to have negative impacts on carrier recombination, charge-transport and ion migration in materials, which thus lower the efficiency, speed and stability of optoelectronic devices. Meanwhile, lots of efforts which focused on minimizing defects have greatly improved the performances of devices. Then, can defects be positive in optoelectronic devices? Herein, relying on in-depth understanding of defect-associated effects in semiconductors, trapping of photo-generated carriers by defects is applied to enlarge photoconductive gain in photodetection. Therefore, the record photoconductive gain, gain-bandwidth product and detection limit were achieved in this photodetector. Exceeding the general concept that defects are harmful, we identify a new view that the defects can be positive in photodetection, which may guide us to design high-performance photodetectors.