2022/03/12 by Mohammad Hosein Fotovvat, Fotovvat, Mohammad Hosein, Zahra Shomali +1 · 2 citations
Engineering · Materials Science · Mathematics · #Applied Physics (physics.app-ph) #FOS: Physical sciences #Fractional Differential Equations Solutions #Heat Transfer and Optimization #Mesoscale and Nanoscale Physics (cond-mat.mes-hall) #Thermal properties of materials
paper · pdf · doi:10.48550/arxiv.2203.06523
openalex publication_date 2022/03/12 · openalex created_date 2022/05/22 · openalex updated_date 2026/07/28
In this study, a time fractional dual-phase-lag model with temperature jump\nboundary condition as a choice for the Fourier's law replacement in thermal\nmodeling of transistors, is utilized. In more details, the numerical simulation\nof heat transfer in newly proposed TMTC field effect transistors using\nfractional DPL equation has been investigated. Moreover, the Caputo fractional\nderivative is employed to formulate the finite difference scheme for\ndiscretization of the fractional DPL model. In order to obtain more precise\nresults for the peak temperature rise, the temperature and heat flux profiles,\nthe size-dependent thermal properties are taken into account. Also, the\ntemperature jump boundary condition has been also applied by means of a\nmixed-type boundary condition. It is obtained that considering size-dependent\nthermal characteristics for transistors under study, results in increase of the\npeak temperature rise up to 250 percent. Furthermore, considering constant bulk\nthermal properties for the silicon MOSFET, certain oscillations are observed in\nthe time-variation of the peak temperature rise for alpha= 0.7, 0.9 and 1. This\npresents the so-called negative bias temperature instability appearing in\nelectronic nano-semiconductor devices. Finally, the hotspot temperature has\nbeen researched in transistors containing two-dimensional materials with quasi\none-dimensional band structure channels. It is obtained that among the studied\nFETs, titanium trisulfide with maximum temperature increase of 19.63 K exhibits\nthe least peak temperature rise. This presents that TiS3 may be an acceptable\nsilicon channel replacement as far as the thermal issues are concerned.\n